The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Apr. 11, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Daniel Morvay, Mechanicville, NY (US);
Taejoon Han, Clifton Park, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 9/445 (2018.01); G03F 7/20 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5036 (2013.01); G03F 7/70 (2013.01); G03F 7/70866 (2013.01); G03F 7/70875 (2013.01); G06F 2217/16 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01);
Abstract
Described herein are technologies to facilitate the generation and presentation of a map of an attribute of a substrate, such as a semiconductor wafer. Using the data of measured attribute (e.g., thickness, temperature, etc.) of a substrate, one or more of the described implementations generate data of non-measured (i.e., calculated) attributes to complete a map of the substrate using model parameters and a correlations model, such as a squared exponential Gaussian process model.