The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Dec. 26, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ravi Pillarisetty, Portland, OR (US);

Prashant Majhi, San Jose, CA (US);

Uday Shah, Portland, OR (US);

Niloy Mukherjee, Portland, OR (US);

Elijah V. Karpov, Santa Clara, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01);
Abstract

An embodiment includes a resistive random access memory (RRAM) comprising: top and bottom electrodes; first and second oxygen exchange layers (OELs) between the top and bottom electrodes; an oxide layer between the first and second OELs; wherein (a) first oxygen vacancies are within an upper third of the oxide layer at a first concentration, (b) second oxygen vacancies are within a lower third of the oxide layer at a second concentration, and (c) third oxygen vacancies are within a middle third of the oxide layer at a third concentration that is less than either of the first and second concentrations. Other embodiments are described herein.


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