The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 16, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Hailong Zhou, San Jose, CA (US);
Yangchung Lee, Oakland, CA (US);
Chain Lee, Sunnyvale, CA (US);
Hui Sun, Santa Clara, CA (US);
Jonathan Sungehul Kim, Danville, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon.