The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Apr. 25, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Ming Chen, Hsinchu, TW;
Tsu-Hui Su, Taipei, TW;
Szu-Yu Wang, Hsinchu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ru-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Some embodiments of the present disclosure relate to a method for forming flash memory. In this method, a tunnel oxide is formed over a semiconductor substrate. A layer of silicon dot nucleates is formed on the tunnel oxide. The layer of silicon dots includes silicon dot nucleates having respective initial sizes which differ according to a first size distribution. An etching process is performed to reduce the initial sizes of the silicon dot nucleates so reduced-size silicon dot nucleates have respective reduced sizes which differ according to a second size distribution. The second size distribution has a smaller spread than the first size distribution.