The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Oct. 25, 2017
Applicant:

Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;

Inventors:

Fujio Masuoka, Tokyo, JP;

Hiroki Nakamura, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 31/0352 (2006.01); H01L 29/15 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 29/151 (2013.01); H01L 29/0684 (2013.01);
Abstract

A semiconductor device includes a pillar-shaped semiconductor layer formed on a planar semiconductor layer, a first insulator surrounding the pillar-shaped semiconductor layer, a first gate surrounding the first insulator and made of a metal having a first work function, a second gate surrounding the first insulator and made of a metal having a second work function different from the first work function, a third gate surrounding the first insulator and made of a metal having the first work function, a first metal layer surrounding the first insulator and having a third work function, and a second metal layer surrounding the first insulator and having the third work function. The first gate, the second gate, and the third gate are electrically connected together.


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