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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10490468 B1

PDFFull Text
Date of Patent:
Nov. 26, 2019

Filed:

Mar. 28, 2018

Semiconductor structure with conductive structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Pei-Chun Tsai, Taoyuan, TW;

Wei-Sen Chang, Jinsha Township, TW;

Tin-Hao Kuo, Hsinchu, TW;

Hao-Yi Tsai, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01); G01R 31/28 (2006.01); G01R 31/00 (2006.01); G01R 1/073 (2006.01); G01R 31/02 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 1/073 (2013.01); G01R 31/00 (2013.01); G01R 31/02 (2013.01); G01R 31/28 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 23/3114 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49811 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 24/96 (2013.01); H01L 25/0657 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/19 (2013.01); H01L 2224/20 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/96 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure also includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure further includes a conductive structure accessibly arranged through the trench of the protection layer and electrically connected to the conductive pad. The conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer.

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