The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Feb. 09, 2018
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Inventors:
Igor Rapoport, Eugene, OR (US);
Srikanth Kommu, St. Charles, MO (US);
Igor Peidous, Eaton, OH (US);
Gang Wang, Grover, MO (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Assignee:
GLOBALWAFERS CO., LTD., , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/66 (2006.01); G01R 31/26 (2014.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01R 31/2648 (2013.01); H01L 22/20 (2013.01); H01L 23/66 (2013.01); H01L 27/12 (2013.01);
Abstract
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.