The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Apr. 10, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Mandar B. Pandit, Milpitas, CA (US);

Mang-Mang Ling, San Jose, CA (US);

Tom Choi, Sunnyvale, CA (US);

Nitin K. Ingle, San Jose, CA (US);

Assignee:

Appled Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/06 (2006.01); H01L 23/10 (2006.01); H01L 23/15 (2006.01); H01L 23/58 (2006.01); H01L 21/033 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 29/66545 (2013.01);
Abstract

Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.


Find Patent Forward Citations

Loading…