The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Sep. 23, 2015
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Jeffery D. Bielefeld, Forest Grove, OR (US);
Manish Chandhok, Beaverton, OR (US);
Asad Iqbal, Portland, OR (US);
John D. Brooks, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/764 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/764 (2013.01); H01L 21/76802 (2013.01); H01L 21/76825 (2013.01); H01L 21/76826 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 23/53295 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01); H01L 21/76885 (2013.01);
Abstract
A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.