The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Oct. 29, 2015
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Assignee:
SILTRONIC AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); B08B 3/08 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3225 (2013.01); B08B 3/08 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 33/10 (2013.01); H01L 21/0214 (2013.01); H01L 21/02052 (2013.01); H01L 21/02249 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/30625 (2013.01); H01L 29/16 (2013.01); H01L 29/32 (2013.01);
Abstract
Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.