The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 24, 2018
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Thantip Krasienapibal, Tokyo, JP;
Yasuhiro Shirasaki, Tokyo, JP;
Momoyo Enyama, Tokyo, JP;
Sayaka Kurata, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
In this invention, information of material composition, process conditions and candidates of crystal structure either known or imported from material database is used to determine sample stage tilt angle and working distance (WD). Under these determined tilt angle and WD, the intensity of the electrons emitted at different angles and with different energies is measured using a scanning electron microscope (SEM) system comprising: a use of materials database containing materials composition, formation process, crystal structure and its electron yield; a sample stage that is able to move, rotate and tilt; an processing section for calculating optimum working distance for an observation from material database and measurement condition; means for acquiring an image of crystal information of a desired area of a sample based on an image obtained from SEM observation.