The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 01, 2017
Applicant:
Unisantis Electronics Singapore Pte. Ltd., Peninsula Plaza, SG;
Inventors:
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
Assignee:
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0273 (2013.01); H01L 21/31055 (2013.01); H01L 21/32055 (2013.01); H01L 21/32115 (2013.01); H01L 21/32133 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 23/528 (2013.01); H01L 27/088 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01);
Abstract
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a first insulating film around the fin-shaped semiconductor layer. A first contact is on the fin-shaped semiconductor layer, where the first contact is metal contact. A first gate insulating film is around the first contact and a fourth contact on the first contact, and a second gate insulating film is around the fourth contact.