The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Aug. 30, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Wei Jiang, Hsinchu, TW;

Jia-Rong Chiou, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract

A 3D memory device includes a substrate, a multi-layers stack and a dielectric material. The substrate has a concave portion extending along a first direction into the substrate from a surface thereof. The multi-layers stack includes a plurality of conductive layers and a plurality of insulating layers alternatively stacked along the first direction on a bottom of the concave portion. The multi-layers stack also has at least one recess passing through the conductive layers and the insulating layers along the first direction, wherein the recess has a cross-sectional bottom profile and a cross-sectional opening profile perpendicular to the first direction and the cross-sectional bottom profile has a size substantially greater than that of the cross-sectional opening profile. The dielectric material is at least partially filled in the recess.


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