The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Apr. 16, 2018
Applicants:
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Inventor:
Yukihiro Nagai, Saijo, JP;
Assignees:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 27/108 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01);
Abstract
A fuse structure for dynamic random access memory (DRAM) includes: a shallow trench isolation (STI) in a substrate; a first select gate in the substrate and adjacent to one side of the STI; a second select gate in the substrate and adjacent to another side of the STI; and a gate structure on the STI, the first select gate, and the second select gate.