The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jul. 10, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fu-Jung Chuang, Kaohsiung, TW;
Ching-Ling Lin, Kaohsiung, TW;
Po-Jen Chuang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Wen-An Liang, Tainan, TW;
Chia-Ming Kuo, Kaohsiung, TW;
Guan-Wei Huang, Tainan, TW;
Yuan-Yu Chung, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to forma first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.