The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Sep. 30, 2013
Entegris, Inc., Billerica, MA (US);
Bryan C. Hendrix, Danbury, CT (US);
Weimin Li, New Milford, CT (US);
James Anthony O'Neill, New City, NY (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
A high dielectric constant metal-insulator structure, including an electrode comprising NiOwherein 1<x≤1.5, and a high k dielectric material in contact with the electrode. The structure may have a further electrode in contact with the high k dielectric material, to form a metal-insulator-metal (MIM) capacitor, e.g., including a bottom electrode comprising NiOwherein 1<x≤1.5, a high k dielectric material overlying the bottom electrode, and a top electrode comprising NiOwherein 1<x≤1.5. The NiOelectrodes in such applications are oxide-stable, high work function electrodes that avoid deterioration of work function and conductivity during electronic device fabrication involving elevated temperature annealing.