The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 18, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tzu-Jui Wang, Fengshan, TW;
Keng-Yu Chou, Kaohsiung, TW;
Chun-Hao Chuang, Hsinchu, TW;
Ming-Chieh Hsu, Hsinchu, TW;
Ren-Jie Lin, Tainan, TW;
Jen-Cheng Liu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14665 (2013.01); H01L 27/14685 (2013.01); H01L 31/02327 (2013.01);
Abstract
A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.