Elevationally-elongated conductive structure of integrated circuitry, method of forming an array of capacitors, method of forming dram circuitry, and method of forming an elevationally-elongated conductive structure of integrated circuitry

Abstract

A method of forming elevationally-elongated conductive structures of integrated circuitry comprises providing a substrate comprising a plurality of spaced elevationally-extending conductive vias. Conductive material is formed directly above and directly against the conductive vias. The conductive material has an upper surface and a first sidewall that are directly above individual of the conductive vias in a vertical cross-section. The conductive material has a second sidewall that is not directly above the individual conductive vias. Covering material is formed directly above individual of the upper surfaces and against individual of the first sidewalls directly above the individual conductive vias. The covering material comprises a composition different from that of at least some of the conductive material. Etching is conducted completely through at least some of the covering material that is directly above the individual upper surfaces to the conductive material directly there-below and etching is conducted into said conductive material. The covering material that is against the individual first sidewalls masks the individual first sidewalls from being etched during said etchings. Structure that may be independent of method is disclosed.