The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Aug. 03, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shen-Nan Lee, Hsinchu County, TW;
Kuo-Yin Lin, Hsinchu County, TW;
Pin-Chuan Su, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device, at first, a semiconductor substrate of a wafer is etched to form at least one fin. Then, an insulation structure is formed around the fin. Thereafter, the fin is recessed. Then, an epitaxial channel structure is epitaxially grown over the recessed fin. Thereafter, a portion of the epitaxial channel structure over a top surface of the insulation structure is removed. Then, a non-contact-type cleaning operation is performed to clean a top surface of the wafer after removing said portion of the epitaxial channel structure. Thereafter, the top surface of the wafer is cleaned using hydrogen fluoride after removing said portion of the epitaxial channel structure. Then, the insulation structure is recessed, such that the epitaxial channel structure protrudes from the recessed insulation structure.