The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 02, 2015
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Emanuel I. Cooper, Scarsdale, NY (US);
Steven Lippy, Brookfield, CT (US);
Lingyan Song, Danbury, CT (US);
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/10 (2006.01); H01L 21/311 (2006.01); C23F 1/26 (2006.01); H01L 21/02 (2006.01); C09K 13/08 (2006.01); C09K 13/10 (2006.01); C11D 7/08 (2006.01); C11D 7/14 (2006.01); C11D 7/22 (2006.01); C11D 7/26 (2006.01); C11D 7/28 (2006.01); C11D 7/32 (2006.01); C11D 7/34 (2006.01); C11D 7/36 (2006.01); C11D 7/50 (2006.01); C11D 11/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31133 (2013.01); C09K 13/08 (2013.01); C09K 13/10 (2013.01); C11D 7/08 (2013.01); C11D 7/14 (2013.01); C11D 7/22 (2013.01); C11D 7/265 (2013.01); C11D 7/28 (2013.01); C11D 7/3263 (2013.01); C11D 7/3281 (2013.01); C11D 7/34 (2013.01); C11D 7/36 (2013.01); C11D 7/5022 (2013.01); C11D 11/0047 (2013.01); C23F 1/26 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/0276 (2013.01); H01L 21/31111 (2013.01);
Abstract
A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.