The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Dec. 29, 2017
Spin Memory, Inc., Fremont, CA (US);
Kuk-Hwan Kim, San Jose, CA (US);
Dafna Beery, Palo Alto, CA (US);
Gian Sharma, Fremont, CA (US);
Marcin Gajek, Berkeley, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Girish Jagtiani, Santa Clara, CA (US);
Eric Michael Ryan, Fremont, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Amitay Levi, Cupertino, CA (US);
Andrew J. Walker, Mountain View, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.