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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10457761 B1

PDFFull Text
Date of Patent:
Oct. 29, 2019

Filed:

Apr. 24, 2017

Polymer, resist composition, and pattern forming process

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Jun Hatakeyama, Joetsu, JP;

Kenji Funatsu, Joetsu, JP;

Teppei Adachi, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
C08F 220/28 (2006.01); C08F 224/00 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); C08F 220/68 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); C08F 236/20 (2006.01); C08F 216/10 (2006.01); C08F 220/38 (2006.01); C08F 212/14 (2006.01); C08F 220/18 (2006.01); C08F 220/40 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
C08F 220/28 (2013.01); C08F 212/14 (2013.01); C08F 216/10 (2013.01); C08F 220/18 (2013.01); C08F 220/38 (2013.01); C08F 220/40 (2013.01); C08F 220/68 (2013.01); C08F 224/00 (2013.01); C08F 236/20 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0048 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); C08F 2220/282 (2013.01); C08F 2220/382 (2013.01);
Abstract

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

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