The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Feb. 06, 2017
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Pouya Hashemi, White Plains, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Alexander Reznicek, Troy, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a method for fabricating a field-effect transistor (FET) structure, forming a fin on a semiconductor substrate. The method further includes forming a gate on a portion of the fin and the semiconductor substrate. The method further includes epitaxially growing a semiconductor material on the fin. The method further includes depositing oxide covering the fin and the epitaxially grown semiconductor material. The method further includes recessing the deposited oxide and the epitaxially grown semiconductor material to expose a top portion of the fin. The method further includes removing the fin. In another embodiment, the method further includes epitaxially growing another fin in a respective trench formed by removing the first set of fins.