The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 17, 2017
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Yohann Frederic Michel Solaro, Singapore, SG;
Vvss Satyasuresh Choppalli, Singapore, SG;
Chai Ean Gill, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A method of forming a LDMOS with a self-aligned P+ implant and LVPW region at the source side and the resulting device are provided. Embodiments include forming a DNWELL in a p-sub; forming a PWHV in the DNWELL; forming an NW in the DNWELL; forming a LVPW in the PWHV; forming STI structures through the LVPW and through the DNWELL and NW, respectively; forming a gate over the PWHV; forming a first and a second P+ implant in the LVPW, an edge of the second P+ implant aligned with an edge of the gate; forming a first N+ implant in the LVPW between the first STI structure and the second P+ implant and a second N+ in the NW adjacent to the second STI structure; and forming contacts over the first and second P+ and N+ implants, respectively, and an electrical contact over the second N+ implant.