The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
May. 17, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Hung Cheng, Tainan, TW;
Ching-Wei Tsai, Hsinchu, TW;
Yeur-Luen Tu, Taichung, TW;
Tung-I Lin, Tainan, TW;
Wei-Li Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes providing a first wafer comprising a substrate and a first semiconductor material layer, bonding the first wafer to a second wafer, the second wafer comprising a sacrificial layer and a second semiconductor material layer, removing the sacrificial layer, patterning the bonded wafers to create a first structure and a second structure, removing the second semiconductor material from the first structure, forming a first type of transistor in the first semiconductor material of the first structure, and forming a second type of transistor in the second semiconductor material of the second structure.