The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Feb. 14, 2017
Globalfoundries Inc., Grand Cayman, KY;
Xiaofeng Qiu, Ballston Lake, NY (US);
Michael V. Aquilino, Saratoga Springs, NY (US);
Patrick D. Carpenter, Saratoga Spring, NY (US);
Jessica Dechene, Watervliet, NY (US);
Ming Hao Tang, Ballston Lake, NY (US);
Haigou Huang, Rexford, NY (US);
Huy Cao, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.