The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Apr. 12, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kandabara N. Tapily, Mechanicville, NY (US);
Takashi Matsumoto, Hosaka, JP;
Yusaku Kashiwagi, Tokyo, JP;
Gerrit J. Leusink, Rexford, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of the invention describe methods for selective vertical growth of dielectric material on a dielectric substrate. According to one embodiment, the method includes providing a planarized substrate containing a first material having a recessed feature that is filled with a second material, selectively depositing a graphene layer on the second material relative to the first material, selectively depositing a SiOfilm on the first material relative to the graphene layer, and removing the graphene layer from the substrate. According to one embodiment, the first material includes a dielectric material and the second material includes a metal layer.