The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Apr. 25, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Qin Zhong, Santa Clara, CA (US);
Antoine P. Manens, Saratoga, CA (US);
Hwan J. Jeong, Los Altos, CA (US);
APPLIED MATERIALS, INC., Santa Clara, unknown;
Abstract
A method for qualitatively detecting aberration and determine aberration types in a photolithography system is disclosed. The method includes using a digital micromirror device (DMD) pattern to project an optical signal on a reflective substrate, acquiring a return optical signal reflected from the substrate at different focus heights (ranging from above to below best focus), forming a through focus curve based off of the return optical signal at various focus heights, comparing the through focus curve to a predetermined curve—the predetermined curve being a function of focus, and determining if a lens aberration is present. By using the existing hardware of the photolithography system to determine if a lens aberration exists, costs are maintained at a minimum and the DMD pattern creates a through focus curve (TFC) image in less than five minutes allowing for quick correction.