The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

May. 01, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Oscar van der Straten, Guilderland Center, NY (US);

Adra Carr, Albany, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/64 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/1608 (2013.01);
Abstract

A method of forming a resistive random access memory device which contains uniform layer composition is provided. The method enables the in-situ deposition of a bottom electrode layer (i.e., a metal layer), a resistive switching element (i.e., at least one metal oxide layer), and a top electrode layer (i.e., a metal nitride layer and/or a metal layer) with compositional control. Resistive random access memory devices which contain uniform layer composition enabled by the in-situ deposition of the bottom electrode layer, the resistive switching element, and the top electrode layer provide significant benefits for advanced memory technologies.


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