The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Oct. 30, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Hao Lin, Kaohsiung, TW;
Hsin-Yu Chen, Nantou County, TW;
Chun-Tsen Lu, Tainan, TW;
Shou-Wei Hsieh, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; a first oxide layer on the first fin-shaped structure; a second oxide layer on and directly contacting the first oxide layer and the STI; and a third oxide layer on the second fin-shaped structure, wherein a thickness of the third oxide layer is less than a thickness of the first oxide layer.