The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Apr. 11, 2018
Globalfoundries Inc., Grand Cayman, KY;
Jiehui Shu, Clifton Park, NY (US);
Xiaohan Wang, Clifton Park, NY (US);
Qiang Fang, Ballston Lake, NY (US);
Zhiguo Sun, Halfmoon, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Hui Zang, Guilderland, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods of self-aligned multiple patterning and structures formed by self-aligned multiple patterning. A mandrel line is patterned from a first mandrel layer disposed on a hardmask and a second mandrel layer disposed over the first mandrel layer. A first section of the second mandrel layer of the mandrel line is removed to expose a first section of the first mandrel layer. The first section of the first mandrel layer is masked, and the second sections of the second mandrel layer and the underlying second portions of the first mandrel layer are removed to expose first portions of the hardmask. The first portions of the hardmask are then removed with an etching process to form a trench in the hardmask. A second portion of the hardmask is masked by the first portion of the first mandrel layer during the etching process to form a cut in the trench.