The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Dec. 29, 2017
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Gian Sharma, Fremont, CA (US);

Amitay Levi, Cupertino, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Kuk-Hwan Kim, San Jose, CA (US);

Dafna Beery, Palo Alto, CA (US);

Assignee:

SPIN MEMORY, INC., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/78642 (2013.01); H01L 43/08 (2013.01);
Abstract

A switching device, according to one embodiment, includes: a cylindrical pillar gate contact, an annular cylindrical channel which encircles a portion of the cylindrical pillar gate contact, an annular cylindrical oxide layer which encircles a portion of the annular cylindrical channel, and a source contact tab which encircles a portion of the annular cylindrical channel toward a first end of the annular cylindrical channel. Other systems are also described in additional embodiments herein which provide various different switching devices having improved components including improved annular cylindrical channel structures, improved source contacts, and/or improved cylindrical pillar gate contacts. These improved systems and components thereof may be implemented in vertical annular transistor structures in comparison to conventional surface transistor structures.


Find Patent Forward Citations

Loading…