The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Feb. 10, 2017
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Fook Hong Lee, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Ee Jan Khor, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/525 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); G06F 17/50 (2006.01); G03F 1/36 (2012.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); G03F 1/36 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 21/768 (2013.01); H01L 23/3192 (2013.01); H01L 23/525 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 24/45 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01);
Abstract

Device and method for forming a device are presented. A substrate having circuit component and a back-end-of-line (BEOL) dielectric layer with interconnects is provided. A pad dielectric layer is formed over the BEOL dielectric layer. The pad dielectric layer includes a pad via opening which exposes a surface of one of the interconnects in the BEOL dielectric layer. A pad interconnect is formed on the pad dielectric layer and the pad interconnect is coupled to one of the interconnect in the BEOL dielectric by a pad via contact in the pad via opening. The pad interconnect comprises a pad interconnect pattern which is devoid of 90° angles and any angled structures contained in the pad interconnect pattern less than 90°. A passivation layer is formed on the substrate. The passivation layer lines the pad interconnect and covers an exposed surface of the pad dielectric layer.


Find Patent Forward Citations

Loading…