The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
May. 10, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Chiukin Steven Lai, Sunnyvale, CA (US);
Jeong-Seok Na, Fremont, CA (US);
Raashina Humayun, Los Altos, CA (US);
Michal Danek, Cupertino, CA (US);
Kaihan Abidi Ashtiani, Cupertino, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 16/045 (2013.01); C23C 16/18 (2013.01); C23C 16/452 (2013.01); C23C 16/45525 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/28556 (2013.01); H01L 21/76801 (2013.01); H01L 21/76831 (2013.01); H01L 21/76838 (2013.01); H01L 21/76843 (2013.01); H01L 21/76847 (2013.01); H01L 21/76855 (2013.01); H01L 21/76856 (2013.01); H01L 21/76864 (2013.01); H01L 21/76871 (2013.01); H01L 23/53209 (2013.01); H01L 21/76883 (2013.01);
Abstract
Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.