The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Feb. 02, 2018
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 29/205 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 21/02433 (2013.01); H01L 21/02631 (2013.01); H01L 29/2003 (2013.01); H01L 33/04 (2013.01);
Abstract
A semiconductor device including a substrate, a semiconductor layer, and a buffer structure is provided. The semiconductor layer is located on the substrate. The buffer structure is located between the substrate and the semiconductor layer. The buffer structure includes a plurality of first layers and a plurality of second layers. The first layers and the second layers are alternately stacked with a same pitch or different pitches.