The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 20, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hayato Hishinuma, Miyagi, JP;
Hisashi Hirose, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/4757 (2006.01); H01L 21/04 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); C30B 33/12 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); C30B 33/12 (2013.01); H01J 37/321 (2013.01); H01J 37/32091 (2013.01); H01L 21/0212 (2013.01); H01L 21/042 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/47573 (2013.01); H01L 21/76826 (2013.01);
Abstract
An etching method is provided for processing a substrate that includes a first region having an insulating film arranged on a silicon layer and a second region having the insulating film arranged on a metal layer. The etching method includes a first step of etching the insulating film into a predetermined pattern using a plasma generated from a first gas until the silicon layer and the metal layer are exposed, and a second step of further etching the silicon layer after the first step using a plasma generated from a second gas including a bromide-containing gas.