The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Aug. 26, 2016
Japan Advanced Institute of Science and Technology, Nomi, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Yuki Tagashira, Nomi, JP;
Reijiro Shimura, Nomi, JP;
Yuzuru Takamura, Nomi, JP;
Jinwang Li, Nomi, JP;
Tatsuya Shimoda, Nomi, JP;
Toshiaki Watanabe, Sanda, JP;
Nobuyuki Soyama, Naka, JP;
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Nomi-shi, JP;
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Abstract
The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.