The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Sep. 02, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shu Fang Fu, Xinpu Township, TW;
Chi-Feng Huang, Zhubei, TW;
Chia-Chung Chen, Keelung, TW;
Victor Chiang Liang, Hsinchu, TW;
Fu-Huan Tsai, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H03K 3/03 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 29/7835 (2013.01); H03K 3/0315 (2013.01);
Abstract
A semiconductor device includes a fin extending from a substrate, a first source/drain feature, a second source/drain feature, and a gate structure on the fin. A distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature.