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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10431504 B1

PDFFull Text
Date of Patent:
Oct. 01, 2019

Filed:

Feb. 25, 2016

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Wolfgang Lehnert, Lintach, DE;

Rudolf Berger, Regensburg, DE;

Albert Birner, Regensburg, DE;

Helmut Brech, Lappersdorf, DE;

Oliver Häberlen, St. Magdalen, AT;

Guenther Ruhl, Regensburg, DE;

Roland Rupp, Lauf, DE;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 21/8258 (2006.01); H01L 21/683 (2006.01); H01L 21/20 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01L 29/08 (2006.01); H01L 27/085 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8258 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 27/0694 (2013.01); H01L 29/7783 (2013.01); H01L 23/481 (2013.01); H01L 27/085 (2013.01); H01L 29/0843 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/78 (2013.01); H01L 33/0079 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

Find Patent Forward Citations

Lehnert, Wolfgang. (2019). Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device (U.S. Patent No. 10431504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10431504

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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