The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Sep. 02, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Nien-Yu Tsai, Taichung, TW;

Chin-Chang Hsu, Banqiao, TW;

Wen-Ju Preet Yang, Hsinchu, TW;

Hsien-Hsin Sean Lee, Duluth, GA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G03F 1/36 (2013.01); G06F 2217/12 (2013.01); Y02P 90/265 (2015.11);
Abstract

A method of generating a plurality of photomasks includes generating a circuit graph. The circuit graph comprises a plurality of vertices and a plurality of edges. Each of the plurality of vertices is representative of one of a plurality of conductive lines. The plurality of edges are representative of a spacing between the conductive lines less than an acceptable minimum distance. Kgraph comprising a first set of vertices selected from the plurality of vertices connected in series by a first set of edges selected from the plurality of edges and having at least one non-series edge connection between a first vertex and a second vertex selected from the first set of vertices is reduced by merging a third vertex into a fourth vertex selected from the first set of the plurality of vertices. An n-pattern conflict check is performed and the photomasks generated based on the result.


Find Patent Forward Citations

Loading…