The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
May. 03, 2018
Qualcomm Incorporated, San Diego, CA (US);
Qingqing Liang, San Diego, CA (US);
Francesco Carobolante, Carlsbad, CA (US);
Sinan Goktepeli, San Diego, CA (US);
George Imthurn, San Diego, CA (US);
Fabio Alessio Marino, San Marcos, CA (US);
Narasimhulu Kanike, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Certain aspects of the present disclosure provide a memory device. One example memory device generally includes a first semiconductor region having a first region, a second region, and a third region, the second region being between the first region and the third region and having a different doping type than the first region and the third region. In certain aspects, the memory device also includes a first non-insulative region, a first insulative region being disposed between the first non-insulative region and the first semiconductor region. In certain aspects, the memory device may include a second non-insulative region, and a second insulative region disposed between the second region and the second non-insulative region, wherein the first insulative region and the second insulative region are disposed adjacent to opposite sides of the second region.