The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Oct. 13, 2017
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/075 (2006.01); C08L 83/06 (2006.01); C08L 83/14 (2006.01); C09D 183/06 (2006.01); C09D 183/14 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); C08L 83/06 (2013.01); C08L 83/14 (2013.01); C09D 183/06 (2013.01); C09D 183/14 (2013.01); G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/0757 (2013.01); G03F 7/11 (2013.01);
Abstract
A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 μm. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.