The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Feb. 05, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tomoyuki Mizutani, Beaverton, OR (US);

Hiroshi Tsujimoto, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); C23C 14/54 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/3244 (2013.01); H01L 21/31138 (2013.01); H01L 21/67109 (2013.01); H01L 21/67253 (2013.01); C23C 14/54 (2013.01); C23C 16/45523 (2013.01); Y10T 137/0324 (2015.04);
Abstract

A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.


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