The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Feb. 21, 2018
Memory device with oxide semiconductor static random access memory and method for operating the same
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Yen Tseng, Tainan, TW;
Ting-Hao Chang, Hsinchu County, TW;
Ching-Cheng Lung, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Shih-Hao Liang, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
Shu-Ru Wang, Taichung, TW;
Hsin-Chih Yu, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a memory device, the memory device includes a first region having a plurality of oxide semiconductor static random access memories (OSSRAM) arranged in a first direction, and each of the OSSRAMs comprising a static random access memory (SRAM) and at least an oxide semiconductor dynamic random access memory (DOSRAM), wherein the DOSRAM is connected to the SRAM, wherein each of the DOSRAMs comprises an oxide semiconductor gate (OSG), and each of the OSGs extending in a second direction perpendicular to the first direction, and an oxide semiconductor channel extending in the first direction, an oxide semiconductor gate connection extending in the first direction to connect each of the OSGs, and a word line, a Vcc connection line and a Vss connection line extend in the first direction and are connected to the SRAMs in each OSSRAM.