The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Aug. 30, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shafqat Ahmed, San Jose, CA (US);

Khaled Hasnat, San Jose, CA (US);

Pranav Kalavade, San Jose, CA (US);

Krishna Parat, Palo Alto, CA (US);

Aaron Yip, Los Gatos, CA (US);

Mark A. Helm, Santa Cruz, CA (US);

Andrew Bicksler, Nampa, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G06F 12/0804 (2016.01); G06F 13/28 (2006.01); G06F 12/0846 (2016.01);
U.S. Cl.
CPC ...
G06F 3/0625 (2013.01); G06F 3/061 (2013.01); G06F 3/0653 (2013.01); G06F 3/0665 (2013.01); G06F 3/0688 (2013.01); G06F 3/0689 (2013.01); G06F 12/0804 (2013.01); G06F 12/0846 (2013.01); G06F 13/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G06F 2212/2022 (2013.01); G06F 2212/224 (2013.01); G06F 2212/461 (2013.01); Y02D 10/14 (2018.01);
Abstract

Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.


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