The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Dec. 16, 2016
Infineon Technologies Ag, Neubiberg, DE;
Johannes Georg Laven, Taufkirchen, DE;
Peter Irsigler, Obernberg/Inn, AT;
Joachim Mahler, Regensburg, DE;
Guenther Ruhl, Regensburg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Markus Zundel, Egmating, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.