The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Dec. 27, 2013
Applicants:

Kui Kam Lam, Kwai Chung, HK;

Pingliang Tu, Kwai Chung, HK;

Zhao Yang, Chengdu, CN;

Jun Qi, Chengdu, CN;

Chun Hung Samuel Ip, Kwai Chung, HK;

Inventors:

Kui Kam Lam, Kwai Chung, HK;

Pingliang Tu, Kwai Chung, HK;

Zhao Yang, Chengdu, CN;

Jun Qi, Chengdu, CN;

Chun Hung Samuel Ip, Kwai Chung, HK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 3/08 (2006.01); B23K 1/00 (2006.01); B23K 1/20 (2006.01); B23K 3/06 (2006.01); H01L 23/00 (2006.01); H01L 21/60 (2006.01); B23K 101/42 (2006.01);
U.S. Cl.
CPC ...
B23K 3/082 (2013.01); B23K 1/0016 (2013.01); B23K 1/206 (2013.01); B23K 3/063 (2013.01); B23K 3/08 (2013.01); H01L 24/75 (2013.01); B23K 2101/42 (2018.08); H01L 24/742 (2013.01); H01L 24/83 (2013.01); H01L 2021/60052 (2013.01); H01L 2224/2733 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/7501 (2013.01); H01L 2224/7565 (2013.01); H01L 2224/7801 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83815 (2013.01);
Abstract

A die attachment apparatus for attaching a semiconductor die onto a substrate having a metallic surface comprises a material dispensing station for dispensing a bonding material onto the substrate and a die attachment station for placing the semiconductor die onto the bonding material which has been dispensed onto the substrate. An activating gas generator positioned before the die attachment station introduces activated forming gas onto the substrate in order to reduce oxides on the substrate.


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