The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Sep. 11, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Che-Wei Chang, Taoyuan, TW;

Chun-Hsiung Wang, Kaohsiung, TW;

Chih-Wei Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/0653 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7816 (2013.01);
Abstract

A semiconductor device includes: a gate structure extending along a first direction on a substrate, in which the gate structure includes a first edge and a second edge extending along the first direction; a first doped region adjacent to one side of the gate structure, in which the first doped region includes a third edge and a fourth edge extending along the first direction; a second doped region adjacent to another side of the gate structure, in which the second doped region comprises a fifth edge and a sixth edge extending along the first direction; a first fin-shaped structure extending from the second edge of the gate structure toward the third edge of the first doped region; and a second fin-shaped structure extending from the first edge of the gate structure toward the sixth edge of the second doped region.


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