The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jun. 11, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Injo Ok, Loudonville, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Balasubramanian Pranatharthiharan, Watervliet, NY (US);

Charan V. V. S. Surisetty, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 21/28097 (2013.01); H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/41775 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/665 (2013.01); H01L 29/66628 (2013.01);
Abstract

A semiconductor device includes a gate arranged on a substrate; a source/drain formed on the substrate adjacent to the gate; a source/drain contact extending from the source/drain and through an interlayer dielectric (ILD) over the source/drain, a portion of the source/drain positioned adjacent to the source/drain contact; and a silicide positioned along a sidewall of the source/drain contact between the portion of the source/drain and the source/drain contact, and along an endwall of the source/drain contact between the source/drain contact and the substrate.


Find Patent Forward Citations

Loading…