The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 20, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); C01B 32/184 (2017.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); C01B 32/184 (2017.08); H01L 29/1606 (2013.01); H01L 29/41741 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); C01B 2204/04 (2013.01);
Abstract
A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. The semiconductor device further includes a transistor wiring structure located adjacent to the graphene layer portion.